| PART |
Description |
Maker |
| DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DP030S |
Extremely low collector-to-emitter saturation voltage 极低的集电极到发射极饱和电压
|
AUK, Corp.
AUK[AUK corp]
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD2403 |
High current capacitance. Low collector saturation voltage.Collector-base voltage VCBO 80 V
|
TY Semiconductor Co., Ltd
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦（高电流增益高集电极电流低集电极发射极饱和电压）
|
Siemens Semiconductor G...
Diotec Elektronische
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| PS21961-4 |
IGBT Module; Continuous Collector Current, Ic:3A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:21.3W; Collector Emitter Voltage, Vceo:600V; Package/Case:Super Mini
|
POWEREX INC
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
